PART |
Description |
Maker |
HD74CDCV851 |
Datasheet|ADE-205-653F|DEC.26.02|88K 技术资料| 205 - 653F | DEC.26.02 | 8.8
|
Hitachi,Ltd.
|
21140 |
DEC Chip
|
Digital Equipment
|
K7B203625A |
64K x 36-Bit Synchronous Burst SRAM Rev. 3.0 (Dec. 1999)
|
Samsung Electronic
|
TA1310N |
NTSC VIDEO, CHROMA, DEFRECTION, AND DEC. DISTORTION COMPENSATION IC (FOR YUV INTERFACE AND ACB WITH)
|
TOSHIBA[Toshiba Semiconductor]
|
TA1310N |
NTSC VIDEO, CHROMA, DEFRECTION, AND DEC. DISTORTION COMPENSATION IC (FOR YUV INTERFACE AND ACB WITH)
|
Toshiba Corporation
|
K7A401800M |
256K x 18-Bit Synchronous Pipelined Burst SRAM Rev. 2.0 (Dec. 1999) 256Kx18 Synchronous SRAM
|
Samsung Electronic Samsung semiconductor
|
AM29LV400BB-120DTE1 AM29LV400BT-120DTE1 AM29LV400B |
32-Tap, Volatile MiniPot, Up/Down Interface, SC70 32-Tap, Volatile DPP with I2C/DEC, Up/Down Interface, MSOP EEPROM EEPROM
|
NXP Semiconductors N.V. Actel, Corp. Advanced Micro Devices, Inc.
|
PUMA2F16006M-90 PUMA2F16006-90 PUMA2F16006M-120E P |
32-Tap, Volatile DPP with I2C/DEC, Up/Down Interface, TSSOP BGA, ROHS-A, IND TEMP, T&R(ARM) BGA,GREEN,IND TEMP,T&R(ARM) x32 Flash EEPROM Module X32号,闪存EEPROM模块 EEPROM EEPROM
|
Infineon Technologies AG Amphenol Tuchel
|
K7A403200M-16 K7A403200M K7A403200M-10 K7A403200M- |
128K x 32-Bit Synchronous Pipelined Burst SRAM Rev. 5.0 (DEC. 1999) 128Kx32-Bit Synchronous Pipelined Burst SRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K7A203600 K7A203600A K7A203600B-QCI14 |
64K x 36-Bit Synchronous Pipelined Burst SRAM Rev. 2.0 (Dec. 1999) 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM 64Kx36-Bit Synchronous Pipelined Burst SRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|